Reactive Ion Etching

Plasma system VacuTec CPU500 for Reactive ion Etching (RIE) with the plasma chamber consists of two Al electrodes of 30 cm diametrer. The etching of structures in rf discharge (13.56 MHz, power up to 700 W) in oxygen, freon and argon is possible to performed. 

Section: 
Optics
Department: 
Analyses of Functional Materials
Contact person: 
Jiří Bulíř
Phone number: 
266052425
E-mail: 
Room: 
158
Number: 
1

Category: