Growth of intrinsic and boron-doped nanocrystalline (NCD) and microcrystalline (MCD) diamond layers on a variety of substrates as well as monocrystalline diamond (SCD).
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Growth of intrinsic and boron-doped nanocrystalline (NCD) and microcrystalline (MCD) diamond layers on a variety of substrates as well as monocrystalline diamond (SCD).
Roth&Rau AK 400 - the simulated reactor:
Large area linear antenna pulsed MW plasma enhanced CVD system combined with RF substrate bias (AK 400 Roth and Rau, GmbH). Different carbon allotrope forms like micro- and nanocrystalline or nanoporous diamond, carbon nanotubes, graphene and others may be grown by the proper substrate choice and pre-treatment and gas mixture composition. Surface termination or functionalization (hydrogenation, oxidation, fluorination) is also possible in this apparatus.
AIX P6 - Aixtron AG - the simulated reactor:
Small area focused plasma MW enhanced CVD system, up to 3inch substrate , 6kW power (AIX P6 - Aixtron AG). Different carbon allotrope forms like micro- and nanocrystalline or nanoporous diamond, carbon nanotubes, graphene and others may be grown by the proper substrate choice and pre-treatment and gas mixture composition. Surface termination or functionalization (hydrogenation, oxidation) is also possible in this apparatus.
This unique Plasma Enhanced Linear Microwave CVD reactor for growth of thin films is used for production of diamond (typically NCD) coatings uniformly spread over large areas.
Very high variable frequency (VHF) chemical vapor deposition (CVD) system for combined silicon and carbon processes and computer-controlled growth of superlattices.
UHV system for Pulsed Laser Deposition with base pressure around 10-7 Pa with fast entry lock.